ULN2003AN datasheet, PDF - EEWORLD Datasheet

ULN2003AN: DescriptionHigh Voltage, High Current Darlington Transistor Arrays; CategoryDiscrete semiconductor The transistor; File Size1MB，35 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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High Voltage, High Current Darlington Transistor Arrays

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it Rohs certified?	conform to
Parts packaging code	DIP
package instruction	DIP-16
Contacts	16
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	COMPLEX
JEDEC-95 code	MS-001BB
JESD-30 code	R-PDIP-T16
JESD-609 code	e3
Number of components	7
Number of terminals	16
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.6 V
Base Number Matches	1

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