5N50L-TF3-T datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> 5N50L-TF3-T

5N50L-TF3-T: DescriptionDrain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.4Ω @ 2.5A, 10V Maximum power dissipation ( Ta=25°C): 38W Type: N-channel N-channel, 500V, 5A, 1.4Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size244KB，6 Pages; ManufacturerUTC(Unisonic Technologies Co., Ltd.); Websitehttp://www.utc-ic.com/; Founded in 1990, Youshun Technology Co., Ltd. focuses on the research and development, design, manufacturing, packaging, testing and marketing of analog ICs and discrete components.

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5N50L-TF3-T Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.4Ω @ 2.5A, 10V Maximum power dissipation ( Ta=25°C): 38W Type: N-channel N-channel, 500V, 5A, 1.4Ω@10V

5N50L-TF3-T Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	500V
Continuous drain current (Id) at 25°C	5A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.4Ω @ 2.5A,10V
Maximum power dissipation (Ta=25°C)	38W
type	N channel

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