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30CPQ060

Description
DC reverse withstand voltage (Vr): - Average rectified current (Io): 2 x 15A Forward voltage drop (Vf): 600mV @ 15A
CategoryDiscrete semiconductor    Schottky diode   
File Size318KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
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30CPQ060 Overview

DC reverse withstand voltage (Vr): - Average rectified current (Io): 2 x 15A Forward voltage drop (Vf): 600mV @ 15A

30CPQ060 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)-
Average rectified current (Io)2 x 15A
Forward voltage drop (Vf)600mV @ 15A
30CPQ050
30CPQ060
Technical Data
Data Sheet N0678, Rev. A
30CPQ050/30CPQ060 SCHOTTKY RECTIFIER
Features
150
C
T
J
operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
TO-247AD
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=112°C,
rectangular wave form
8.3ms, Half Sine pulse, T
C
= 25
C
Max.
50(30CPQ050)
60(30CPQ060)
15(Per Leg)
30(Per Device)
315
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(Per Leg)*
Symbol
V
F1
V
F2
Condition
@ 15A, Pulse, T
J
= 25
C
@ 30A, Pulse, T
J
= 25
C
@ 15A, Pulse, T
J
= 125
C
@ 30A, Pulse, T
J
= 125
C
@V
R
= rated V
R
T
J
= 25
C
@V
R
= rated V
R
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Typ.
0.55
0.61
0.47
0.58
0.2
70
650
-
Max.
0.60
0.80
0.56
0.70
0.8
100
720
10,000
Units
V
V
mA
mA
pF
V/s
Reverse Current
(Per Leg)*
Junction Capacitance(Per Leg)
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
I
R1
I
R2
C
T
dv/dt
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