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MBRF20200CT

Description
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 1V @ 20A
CategoryDiscrete semiconductor    Schottky diode   
File Size79KB,3 Pages
ManufacturerLITE-ON SEMICONDUCTOR
Websitehttp://www.liteon-semi.com/
Dynatronics Corporation (Taiwan Stock Code: 5305) was founded in 1990. The company is headquartered in Neihu District, Taipei City, and has established five business and production bases in Keelung, Hsinchu, Wuxi, China, and Shanghai. In order to strengthen customer service and expand new markets, Dynatronics will continue to establish more business and technical support service bases in key cities in mainland China and the Asia-Pacific region.
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MBRF20200CT Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 1V @ 20A

MBRF20200CT Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)200V
Average rectified current (Io)2 x 10A
Forward voltage drop (Vf)1V @ 20A

MBRF20200CT Preview

Download Datasheet
LITE-ON
SEMICONDUCTOR
MBRF20200CT
REVERSE VOLTAGE
- 200
Volts
FORWARD CURRENT
- 20
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
1
E
ITO-220AB
B
K
M
ITO-220AB
DIM.
MIN.
MAX.
A
B
C
A
15.50
10.0
3.00
9.00
2.90
13.46
1.15
2.40
0.75
16.50
10.40
3.50
9.30
3.60
14.22
1.70
2.70
1.00
C
PIN
2
3
D
E
F
G
H
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
F
G
I
D
J
H
H
L
N
PIN 1
PIN 3
PIN 2
0.45
0.70
3.00
3.30
L
4.36
4.77
M
2.48
2.80
2.80
2.50
N
All Dimensions in millimeter
I
J
K
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
SYMBOL
MBRF20200CT
200
140
200
10
20
UNIT
V
V
V
A
A
V/us
V
RRM
V
RMS
V
DC
I
(AV)
T
C
=120 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
I
FSM
dv/dt
180
10000
0.92
0.75
1.00
0.86
8
5
2.5
250
-65 to +175
2000
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
@T
J
=25 C
@T
J
=125 C
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
R
0JC
uA
mA
C/W
pF
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Junction and Storage
Temperature Range
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
C
J
T
J,
T
STG
V
dis
V
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 226 x114 x 8mm Alumium plate
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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