4.8mm Semi-Lens Silicon PIN Photodiode
PD438B
Features
․Fast
response times
․High
photo sensitivity
․Small
junction capacitance
․Pb
free
․The
product itself will remain within RoHS compliant version.
․Compliance
with EU REACH
Description
․PD438B
is a high speed and sensitive PIN photodiode in a cylindrical side
view plastic package. The epoxy package itself is an IR filter , spectrally
matched to IR emitter.
Applications
․High
speed photo detector
․Camera
․Optoelectronic
switch
․VCRs
, Video camera
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov.23.2016. Issue No: DPD-0000296_Rev.2
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B
Device Selection Guide
Chip
Materials
Lens Color
Black
Silicon
Absolute Maximum Ratings (Ta=25℃)
Parameter
Reverse Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
R
Pd
T
opr
T
stg
Rating
32
150
-40 ~ +85
-40 ~ +100
260
Unit
mA
mW
℃
℃
℃
Soldering Temperature(*1)
T
sol
Notes:
*1: Soldering time≦5 seconds.
:
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov.23.2016 Issue No: DPD-0000296_Rev.2
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang of Spectral
Bandwidth
Wavelength of Peak
Sensitivity
Open-Circuit Voltage
Symbol
λ0.5
λp
Min.
Typ.
Max.
Unit
nm
Condition
400
-----
-----
940
1100
-----
-----
-----
Ee=5m W/cm2
λp=940nm
Ee=1m W/cm2
λp=940nm
Ee=1m W/cm2
nm
VOC
-----
0.35
-----
V
Short- Circuit Current
ISC
-----
18
-----
uA
Reverse Light Current
I
L
10.2
18
-----
uA
λp=940nm
VR=5V
Ee=0m W/cm2
VR=10V
Dark Current
Id
----
5
30
nA
Reverse Breakdown
BVR
32
170
-----
V
Ee=0m W/cm2
IR=100μA
Ee=0m W/cm2
VR=3V
f=1MHZ
VR=10V
RL=1KΩ
Total Capacitance
Ct
----
25
----
pF
Rise/Fall Time
tr/tf
----
50/50
----
nS
Note:
Tolerance of Luminous Intensity: ±10%
Tolerance of Dominant Wavelength: ±1nm
Tolerance of Forward Voltage: ±0.1V
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov.23.2016 Issue No: DPD-0000296_Rev.2
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B
Typical Electro-Optical Characteristics Curves
Power Dissipation vs. Ambient Temperature
Spectral
Sensitivity
200
1.0
Ta=25
C
O
150
0.8
0.6
100
0.4
50
0.2
0
-25
0
25
50
75 85 100
0
600 700 800 900 1000 1100 1200
Dark Current vs. Ambient Temperature
Reverse Light Current vs. Ee
1000
40
30
100
20
10
10
V
R
=5V
V
R
=10V
1
20
40
60
80
100
0
0.5
1
1.5
2
3
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov.23.2016 Issue No: DPD-0000296_Rev.2
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B
Terminal Capacitance vs. Reverse Voltage
Response Time vs. Load Resistance
80
f=1MH
Z
2
t
10
1
V
R
=10V
Ta=25°C
60
10
0
40
10
-1
20
10
10
-2
-3
0
0.1
1
10
100
10
1
10
2
10
3
10
4
10
5
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov.23.2016 Issue No: DPD-0000296_Rev.2
www.everlight.com