NCE6020AI datasheet, PDF - EEWORLD Datasheet

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NCE6020AI: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 35mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 45W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size333KB，7 Pages; ManufacturerWuxi NCE Power Semiconductor Co., Ltd; Websitehttp://www.ncepower.com/

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NCE6020AI Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 35mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 45W(Tc) Type: N-channel

NCE6020AI Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	20A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	35mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)	45W(Tc)
type	N channel

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