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NCE6050IA

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 50A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 20A, 10V Maximum power consumption Dispersed (Ta=25°C): 85W (Tc) Type: N channel N channel.60V.50A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size334KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE6050IA Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 50A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 20A, 10V Maximum power consumption Dispersed (Ta=25°C): 85W (Tc) Type: N channel N channel.60V.50A

NCE6050IA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C50A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance20mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)85W(Tc)
typeN channel

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