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NCE3090K

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5.8mΩ @ 20A, 10V Maximum power Dissipation (Ta=25°C): 105W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size387KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE3090K Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5.8mΩ @ 20A, 10V Maximum power Dissipation (Ta=25°C): 105W(Tc) Type: N-channel

NCE3090K Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C90A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance5.8mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)105W(Tc)
typeN channel
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