EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

NCE3025Q

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 25A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 25W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size329KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE3025Q Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 25A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 25W(Tc) Type: N channel

NCE3025Q Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C25A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance10mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)25W(Tc)
typeN channel

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号