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NCEP60T12AK

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 120A Gate-source threshold voltage: 2.4V @ 250uA Drain-source on-resistance: 4mΩ @ 60A, 10V Maximum power dissipation (Ta =25°C): 180W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size456KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCEP60T12AK Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 120A Gate-source threshold voltage: 2.4V @ 250uA Drain-source on-resistance: 4mΩ @ 60A, 10V Maximum power dissipation (Ta =25°C): 180W(Tc) Type: N channel

NCEP60T12AK Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C120A
Gate-source threshold voltage2.4V @ 250uA
Drain-source on-resistance4mΩ @ 60A,10V
Maximum power dissipation (Ta=25°C)180W(Tc)
typeN channel

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