LSG70R640GT datasheet, PDF - EEWORLD Datasheet

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LSG70R640GT: DescriptionDrain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 640mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 83W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，14 Pages; ManufacturerLonten Semiconductor Co., Ltd.; Websitehttp://www.lonten.cc; Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.

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LSG70R640GT Overview

Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 640mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 83W Type: N-channel

LSG70R640GT Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	700V
Continuous drain current (Id) at 25°C	7A
Gate-source threshold voltage	4.5V @ 250uA
Drain-source on-resistance	640mΩ @ 3.5A,10V
Maximum power dissipation (Ta=25°C)	83W
type	N channel

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LSC70R640GT/LSD70R640GT/LSG70R640GT/

LSH70R640GT/LSF70R640GT

LonFET

Lonten N-channel 700V, 7A, 0.64Ω LonFET

Power MOSFET

Description

LonFET

Product Summary

@ T

j,max

DS(on),max

g,typ

750V

0.64Ω

21A

15nC

The resulting

Power MOSFET is fabricated using

advanced super junction technology.

device has extremely low on resistance, making it

especially suitable for applications which require

superior power density and outstanding efficiency.

Features



Ultra low R

DS(on)

Ultra low gate charge (typ. Q

= 15nC)

100% UIS tested

RoHS compliant

TO-251

TO-252

TO-220

TO-220MF

Applications



TO-262

Power faction correction (PFC).

Switched mode power supplies (SMPS).

Uninterruptible power supply (UPS).

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Continuous drain current

( T

= 25° )

( T

= 100° )

Pulsed drain current

Gate-Source voltage

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

Power Dissipation

TO-220/TO-262 /

GSS

DSS

Symbol

Value

700

4.4

±30

116

0.5

0.67

Unit

W/°

TO-251/TO-252 ( T

= 25° )

- Derate above 25°

Power Dissipation

TO-220F ( T

= 25° )

- Derate above 25°

Mounting torque To-220 ( M3 and M3.5 screws )

0.32

W/°

Ncm

Version 3.0

2018

www.lonten.cc

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