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MMBT2907A

Description
Transistor type: PNP Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 60V Rated power: 300mW PNP
CategoryDiscrete semiconductor    Bipolar transistor   
File Size2MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

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MMBT2907A Overview

Transistor type: PNP Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 60V Rated power: 300mW PNP

MMBT2907A Parametric

Parameter NameAttribute value
polarityPNP
Collector-emitter breakdown voltage60
Collector Current - Continuous0.6
DC current gain - Min100
DC current gain - Max300
Transition frequency200
PackageSOT-23
Storage Temperature Range-55-150
classTransistors
MMBT2907A
PNP General Purpose Amplifier
1. BASE
2. EMITTER
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
MMBT2222A.
3. COLLECTOR
A
SOT-23
Dim
E
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
K
B
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
D
G
H
J
Ideal for medium power amplification and switching.
C
0.1 Typical
K
APPLICATIONS
This device is designed as a general purpose amplifier
and switching.
The useful dynamic range extends to 600mA as a switch
and to 100MHz as a amplifier.
All Dimensions in mm
ORDERING INFORMATION
Type No.
MMBT2907A
Marking
2F
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θjA
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
-60
-60
-5
-600
300
357
-55 to +150
Unit
V
V
V
mA
mW
℃/W
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

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