ES1G datasheet, PDF - EEWORLD Datasheet

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ES1G: DescriptionDC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.25V @ 1A; CategoryDiscrete semiconductor Super fast recovery diode; File Size150KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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ES1G Overview

DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.25V @ 1A

ES1G Parametric

Parameter Name	Attribute value
Case Style	SMA
IF(A)	1
VRRM (V)	400
IFSM (A)	30
VF (V)	1.25
@ IF (A)	1
Maximum reverse current	5
TRR(nS)	35
class	Diodes

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ES1A-ES1J

Surface Mount Rectifiers

VOLTAGE RANGE: 50 ---

600

CURRENT: 1.0 A

Features

Low cost

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

2.1± 0.2

DO-214AC(SMA)

4.5± 0.1

5.1± 0.2

Mechanical Data

Case:JEDEC DO-214AC,molded plastic

Terminals:

Solderable

per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.002 ounces,0.064 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

0.203MAX

1.3± 0.2

2.6± 0.15

0.2± 0.05

1.5± 0.1

ES1A ES1B

ES1C ES1D ES1G

ES1H ES1J

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

=75

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

=125

UNITS

RRM

RMS

F(AV)

100

150

105

150

200

140

200

1.0

400

280

400

500

350

500

600

420

600

FSM

STG

0.98

Maximum instantaneous forward voltage at1.0 A

Maximum reverse current

at rated DC blocking voltage

Typical reverse recovery time

Typical junction capacitance

Typical thermal resistance

=25

=125

(Note1)

(Note2)

(Note3)

1.25

5.0

200

- 55 ---- + 150

1.70

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

=0.5A, I

=1A, I

=0.25A.

2. Measured at 1.0MH

and applied reverse voltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas

ES1G Related Products

	ES1G	ES1J	ES1D
Description	DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.25V @ 1A	DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V @ 1A	DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 980mV @ 1A
Case Style	SMA	SMA	SMA
IF(A)	1	1	1
VRRM (V)	400	600	200
IFSM (A)	30	30	30
VF (V)	1.25	1.7	0.98
@ IF (A)	1	1	1
Maximum reverse current	5	5	5
TRR(nS)	35	35	25
class	Diodes	Diodes	Diodes

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