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S1G

Description
DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A
CategoryDiscrete semiconductor    diode   
File Size968KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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S1G Overview

DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A

S1G Parametric

Parameter NameAttribute value
Parts packaging codeSMA
Manufacturer packaging codeSMA
S1A-S1M
1.0AMP.Surface Mount Rectifiers
SMA/DO-214AC
Features
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
o
260 C / 10 seconds at terminals
0.063(1.60)
0. 051(1.30)
0. 181( 4. 60)
0. 161( 4. 10)
0. 108( 2. 75)
0. 096( 2. 45)
0. 209( 5. 30)
0. 193( 4. 90)
0. 012(0.30)
0. 006(0.15)
0.096(2.45)
0.078(2.00)
0. 059( 1.50)
0.035( 0.90)
0.008(0.20)
0. 002(0.05)
Mechanical Data
Case: Molded plastic
Polarity: Indicated by cathode band
Packaging: 12mm tape
W eight: 0.064 gram
Dimensions in inches and(millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol S1A S1B S1D
Type Number
Maximum Recurrent Peak Reverse Voltage
50
100 200
V
RRM
Maximum RMS Voltage
70
140
35
V
RMS
Maximum DC Blocking Voltage
100 200
50
V
DC
Maximum Average Forward Rectified
Current @T
L
=110
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Typical Reverse Recovery Time (Note 1)
Typical Junction Capacitance ( Note 2 )
Non-Repetitive Peak Reverse Avalanche
Engergy at 25
o
C, I
AS
=1A, L=10mH
Typical Thermal Resistance (Note 3)
S1G
400
280
400
1.0
30
S1J
600
420
600
S1K S1M
Units
800 1000
V
560 700
V
800 1000
V
A
A
V
uA
uA
uS
pF
mJ
30
85
o
I
(AV)
I
FSM
V
F
I
R
1.1
1.0
50
1.5
12
5
27
75
-55 to +150
-55 to +150
Trr
Cj
E
AS
R
θJL
R
θJA
C/W
o
o
T
J
Operating Temperature Range
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
C
C
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

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