JIEJIE MICROELECTRONICS CO. , Ltd
JST24 Series
DESCRIPTION:
JST24 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances,
3 quadrants products especially recommended for
use on inductive load.
JST24A provides insulation voltage rated at 2500V
RMS and JST24F provides insulation voltage rated
at 2000V RMS from all three terminals to external
heatsink complying with UL standards (File ref:
E252906).
25A TRIACs
Rev.3.0
12
3
TO-220A 1
TO-220B
2 3
Insulated
Non-Insulated
2
12
3
TO-220F
Insulated
T1(1)
1
3
TO-263
G(3)
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
Value
25
600 and 800 and 1200
Unit
A
V
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-220A(Ins)/
TO-220F(Ins) (T
C
=75℃)
TO-220B(Non-Ins)
(T
C
=90℃)
TO-263 (T
C
=100℃)
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40-150
-40-125
600/800/1200
600/800/1200
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
RMS on-state
current
I
T(RMS)
25
A
TEL
：+86-513-83639777
- 1 / 6-
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JST24 Series
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
250
340
50
4
1
10
A
A
2
s
A/μs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
V
DRM
/V
RRM
: 600/800V
JST24-600/800V
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
Test Condition
Quadrant
BW
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
Without snubber T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
MAX
100
MAX
MIN
MIN
75
1000
22
80
50
500
13
mA
V/μs
V/μs
MAX
MAX
MIN
80
50
1.3
0.2
70
mA
CW
35
mA
V
V
Unit
V
DRM
/V
RRM
: 1200V
JST24-1200V
Symbol
I
GT
V
GT
V
GD
I
L
I
H
Test Condition
Quadrant
BW
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
- 2 / 6-
Unit
CW
35
1.5
0.2
90
MAX
100
MAX
80
80
60
mA
70
mA
mA
V
V
MAX
MAX
MIN
50
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
TEL
：+86-513-83639777
http://www.jjwdz.com
JST24 Series
dV/dt
(dV/dt)c
Without snubber T
j
=125℃
JieJie Microelectronics CO. , Ltd
MIN
MIN
1500
30
1000
20
V/μs
V/μs
V
D
=2/3V
DRM
Gate Open T
j
=125℃
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=35A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.5
5
3
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-220A(Ins)
TO-220B(Non-Ins)
R
th(j-c)
junction to case(AC)
TO-220F(Ins)
TO-263
3.3
0.85
Value
3.9
1.2
℃/W
Unit
ORDERING INFORMATION
J
JieJie Microelectronics Co.,Ltd
ST
Triacs
24
A
-600
BW
BW:I
GT3
≤50mA
CW:I
GT3
≤35mA
I
T(RMS)
:25A
E:TO-263
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
600:V
DRM
/V
RRM
≥600V
800:V
DRM
/V
RRM
≥800V
1200:V
DRM
/V
RRM
≥1200V
TEL
：+86-513-83639777
- 3 / 6-
http://www.jjwdz.com
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