FHF5N65B datasheet, PDF - EEWORLD Datasheet

FHF5N65B: CategoryDiscrete semiconductor MOS (field effect tube); File Size1012KB，12 Pages; ManufacturerFeiHong; Websitehttp://www.gzfeihong.com/; Guangzhou Feihong Semiconductor Co., Ltd. was established in Yuexiu District, Guangzhou, and has been operating with integrity for more than 20 years. It mainly develops, produces and operates semiconductor devices such as field effect transistors and triodes, which are currently widely used in audio, household appliances, LED lighting, computer power supplies, chargers, inverters, battery vehicles, automotive electronics and other industries, providing high-quality supporting services for domestic electrical appliance manufacturers.

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FHF5N65B Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	5A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.8Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)	30W(Tc)
type	N channel

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