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BD677

CategoryDiscrete semiconductor    The transistor   
File Size362KB,12 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSIP
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time8 weeks
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max2.5 V
Base Number Matches1
BD6xxx
Complementary power Darlington transistors
Features
.
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
1
Applications
3
2
Linear and switching industrial equipment
SOT-32
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Figure 1.
Internal schematic diagram
R1 typ.= 15 KΩ
R2 typ.= 100
Table 1.
Device summary
Marking
BD677
BD677A
BD678
BD678A
BD679
SOT-32
BD679A
BD680
BD680A
BD681
BD682
BD679A
BD680
BD680A
BD681
BD682
Rev 5
1/12
www.st.com
12
Order codes
BD677
BD677A
BD678
BD678A
BD679
Package
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