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NUP2115LT1G

CategoryDiscrete semiconductor    diode   
File Size127KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NUP2115LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time2 weeks
Is SamacsysN
Maximum breakdown voltage32 V
Minimum breakdown voltage26.2 V
Breakdown voltage nominal value29.1 V
Maximum clamping voltage44 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation200 W
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineIEC-61000-4-2, 4-4, 4-5
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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