MM3Z4V7T1G datasheet, PDF - EEWORLD Datasheet

MM3Z4V7T1G: DescriptionMaximum power: 300mW Accuracy: - Reverse leakage current: 3uA @ 2V Regulated voltage value (typical value): 4.7V; CategoryDiscrete semiconductor diode; File Size59KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Maximum power: 300mW Accuracy: - Reverse leakage current: 3uA @ 2V Regulated voltage value (typical value): 4.7V

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
package instruction	0.067 X 0.049 INCH, 0.035 INCH HEIGHT, LEAD FREE, PLASTIC, CASE 477-02, 2 PIN
Contacts	2
Manufacturer packaging code	477-02
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	8 weeks
Other features	UL RECOGNIZED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	80 Ω
JESD-30 code	R-PDSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.2 W
Certification status	Not Qualified
Nominal reference voltage	4.7 V
surface mount	YES
technology	ZENER
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Maximum voltage tolerance	6.38%
Working test current	5 mA
Base Number Matches	1

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