MJD148
NPN Silicon Power
Transistor
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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•
•
•
•
•
High Gain
Low Saturation Voltage
High Current Gain − Bandwidth Product
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
20
0.16
P
D
1.75
0.014
T
J
, T
stg
HBM
MM
−55 to +150
3B
C
W
W/°C
°C
V
V
W
W/°C
Value
45
45
5.0
4.0
7.0
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
mAdc
POWER TRANSISTOR
4.0 AMPERES
45 VOLTS, 20 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J148G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
A
Y
WW
J148
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD148T4G
NJVMJD148T4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2,500/Tape & Reel
2,500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 9
Publication Order Number:
MJD148/D
MJD148
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
Max
Unit
Thermal Resistance, Junction−to−Case
6.25
71.4
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5 Vdc)
(I
C
= 0.5 Adc, V
CE
= 1 Vdc)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
(I
C
= 3 Adc, V
CE
= 1 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 2 Adc, I
B
= 0.2 Adc)
Base−Emitter On Voltage
(I
C
= 2 Adc, V
CE
= 1 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 250 mAdc, V
CE
= 1 Vdc, f = 1 MHz)
f
T
3
−
MHz
h
FE
40
85
50
30
V
CE(sat)
−
V
BE(on)
−
1.1
0.5
Vdc
−
375
−
−
Vdc
−
V
CEO(sus)
45
I
CBO
−
I
EBO
−
1
20
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
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2
MJD148
TYPICAL CHARACTERISTICS
10000
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
10000
V
CE
= 10 V
1000 150°C
100°C
25°C
−55°C
100
1000
150°C
100°C
25°C
−55°C
100
10
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
10
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
Figure 1. DC Current Gain
Figure 2. DC Current Gain
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
2
T
J
= 25°C
1.6
1.2
I
C
= 10 mA
100 mA
1A
3A
0.8
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5 7 10
I
B
, BASE CURRENT (mA)
20
30
50 70 100
200 300 500
Figure 3. Collector Saturation Region
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.2
V
CE
= 2 V
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0
0.00001 0.0001
T
A
= −55°C
25°C
100°C
150°C
1.2
I
C
/I
B
= 10
1.0
0.8
T
A
= −55°C
0.6
0.4 25°C
0.2 100°C
0.001
0.01
0.1
1
10
150°C
0
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
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Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
MJD148
0.5
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.45
0.4
I
C
/I
B
= 10
q
y
, TEMPERATURE COEFFI-
CIENTS (mV/°C)
+ 2.5
+2
+ 1.5
+1
+ 0.5
0
−0.5
−1
−1.5
−2
0.001
0.01
0.1
1
10
−2.5
0.005 0.01 0.020.030.05 0.1 0.20.3 0.5
1
I
C
, COLLECTOR CURRENT (A)
2
34
q
V
for V
BE
*q
V
for V
CE(sat)
*APPLIES FOR I
C
/I
B
≤
h
FE
/2
*T
J
= − 65°C to + 150°C
0.35
0.3
0.25
0.2
T
A
= −55°C
0.15
0.1
0.5 25°C
100°C
150°C
0
0.000001 0.00001 0.0001
I
C
, COLLECTOR CURRENT (A)
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Temperature Coefficients
10
3
V
CE
= 30 V
I
C
, COLLECTOR CURRENT (mA)
10
2
10
1
10
0
10
−1
10
−2
T
J
= 150°C
100°C
REVERSE
FORWARD
25°C
I
CES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
10
−3
−0.4 −0.3 −0.2 −0.1
V
BE
, BASE−EMITTER VOLTAGE (V)
Figure 8. Collector Cut−Off Region
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
T
J(pk)
− T
C
= P
(pk)
Z
qJC
(t)
DUTY CYCLE, D = t
1
/t
2
0.1
0.07
0.05
0.03
0.02
0.05
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
t, TIME (ms)
10
20
50
100
200
500
1k
Figure 9. Thermal Response
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MJD148
10
IC, COLLECTOR CURRENT (A)
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
1
500
ms
dc
5 ms
1 ms
Forward Bias Safe Operating Area Information
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
T
C
= 25°C SINGLE PULSE, D
≤
0.1%
T
J
= 150°C
5 7 10
2
3
20 30
50 70
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 10. Maximum Rated Forward Bias
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