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FDS6892A

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 7.5A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 18mΩ @ 7.5A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 900mW Type: Dual N-channel Dual N-channel, 20V, 7.5A, 18mΩ@4.5V
CategoryDiscrete semiconductor    The transistor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FDS6892A Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 7.5A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 18mΩ @ 7.5A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 900mW Type: Dual N-channel Dual N-channel, 20V, 7.5A, 18mΩ@4.5V

FDS6892A Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G8
Manufacturer packaging code751EB
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionFDS6892A, Dual N-channel MOSFET Transistor 7.5A 20V, 8-Pin SOIC
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)7.5 A
Maximum drain current (ID)7.5 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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