Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 7.5A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 18mΩ @ 7.5A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 900mW Type: Dual N-channel Dual N-channel, 20V, 7.5A, 18mΩ@4.5V
Parameter Name | Attribute value |
Brand Name | ON Semiconductor |
Is it lead-free? | Lead free |
Maker | ON Semiconductor |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Manufacturer packaging code | 751EB |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Factory Lead Time | 1 week |
Samacsys Description | FDS6892A, Dual N-channel MOSFET Transistor 7.5A 20V, 8-Pin SOIC |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 20 V |
Maximum drain current (Abs) (ID) | 7.5 A |
Maximum drain current (ID) | 7.5 A |
Maximum drain-source on-resistance | 0.018 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G8 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 2 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 2 W |
Maximum pulsed drain current (IDM) | 30 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |