Rated power: 187mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: 2 NPN pre-biased (dual) dual NPN band-stop transistor, 50V, 100mA, R=10K/10K
| Parameter Name | Attribute value |
| Brand Name | ON Semiconductor |
| Is it lead-free? | Lead free |
| Parts packaging code | SC-70 |
| package instruction | SMALL OUTLINE, R-PDSO-G6 |
| Contacts | 6 |
| Manufacturer packaging code | 419B-02 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 1 week |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 35 |
| JESD-30 code | R-PDSO-G6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 2 |
| Number of terminals | 6 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.15 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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