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PDTD113ZT,215

Description
Rated power: 250mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 500mA
CategoryDiscrete semiconductor    The transistor   
File Size173KB,10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

PDTD113ZT,215 Overview

Rated power: 250mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 500mA

PDTD113ZT,215 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTO-236
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Samacsys DescriptionPDTD113ZT - NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
Other featuresBUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

PDTD113ZT,215 Related Products

PDTD113ZT,215 PDTD113ZTVL PDTD113ZT,235
Description Rated power: 250mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 500mA PDTD113ZT/SOT23/TO-236AB Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
package instruction SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant compliant
Other features BUILT IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 70 70
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Brand Name Nexperia Nexperia -
Maker Nexperia - Nexperia
Parts packaging code TO-236 TO-236 -
Contacts 3 3 -
Manufacturer packaging code SOT23 SOT23 -
ECCN code EAR99 - EAR99
JESD-609 code e3 - e3
Terminal surface Tin (Sn) - Tin (Sn)

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