|
PDTD113ZT,215 |
PDTD113ZTVL |
PDTD113ZT,235 |
Description |
Rated power: 250mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased NPN, 50V, 500mA |
PDTD113ZT/SOT23/TO-236AB |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB |
package instruction |
SMALL OUTLINE, R-PDSO-G3 |
PLASTIC PACKAGE-3 |
PLASTIC PACKAGE-3 |
Reach Compliance Code |
compliant |
compliant |
compliant |
Other features |
BUILT IN BIAS RESISTOR RATIO IS 10 |
BUILT IN BIAS RESISTOR RATIO IS 10 |
BUILT IN BIAS RESISTOR RATIO IS 10 |
Maximum collector current (IC) |
0.5 A |
0.5 A |
0.5 A |
Collector-emitter maximum voltage |
50 V |
50 V |
50 V |
Configuration |
SINGLE WITH BUILT-IN RESISTOR |
SINGLE WITH BUILT-IN RESISTOR |
SINGLE WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) |
70 |
70 |
70 |
JEDEC-95 code |
TO-236AB |
TO-236AB |
TO-236AB |
JESD-30 code |
R-PDSO-G3 |
R-PDSO-G3 |
R-PDSO-G3 |
Humidity sensitivity level |
1 |
1 |
1 |
Number of components |
1 |
1 |
1 |
Number of terminals |
3 |
3 |
3 |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
Polarity/channel type |
NPN |
NPN |
NPN |
surface mount |
YES |
YES |
YES |
Terminal form |
GULL WING |
GULL WING |
GULL WING |
Terminal location |
DUAL |
DUAL |
DUAL |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Brand Name |
Nexperia |
Nexperia |
- |
Maker |
Nexperia |
- |
Nexperia |
Parts packaging code |
TO-236 |
TO-236 |
- |
Contacts |
3 |
3 |
- |
Manufacturer packaging code |
SOT23 |
SOT23 |
- |
ECCN code |
EAR99 |
- |
EAR99 |
JESD-609 code |
e3 |
- |
e3 |
Terminal surface |
Tin (Sn) |
- |
Tin (Sn) |