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PUMH11,115

Description
Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: 2 NPN pre-biased (dual) Pre-bias 2 NPN, Vceo=50V, Ic=100mA
CategoryDiscrete semiconductor    The transistor   
File Size701KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

PUMH11,115 Overview

Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: 2 NPN pre-biased (dual) Pre-bias 2 NPN, Vceo=50V, Ic=100mA

PUMH11,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeSOT363
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID307577
Samacsys Pin Count6
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategorySOT23 (6-Pin)
Samacsys Footprint NameNXP SOT-363
Samacsys Released Date2017-07-02 16:34:37
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)230 MHz
Base Number Matches1
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

PUMH11,115 Related Products

PUMH11,115 PEMH11,115 PEMH11,315 PUMH11F
Description Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: 2 NPN pre-biased (dual) Pre-bias 2 NPN, Vceo=50V, Ic=100mA TRANS 2NPN PREBIAS 0.3W SOT666 TRANS 2NPN PREBIAS 0.3W SOT666 TRANS 2NPN PREBIAS 0.3W SC-88
Brand Name Nexperia Nexperia Nexperia Nexperia
Parts packaging code TSSOP SOT SOT TSSOP
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6
Manufacturer packaging code SOT363 SOT666 SOT666 SOT363
Reach Compliance Code compliant compliant compliant compliant
Other features BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30 30 30
JESD-30 code R-PDSO-G6 R-PDSO-F6 R-PDSO-F6 R-PDSO-G6
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
surface mount YES YES YES YES
Terminal form GULL WING FLAT FLAT GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 230 MHz 230 MHz 230 MHz 230 MHz
Maker Nexperia - Nexperia Nexperia
ECCN code EAR99 EAR99 EAR99 -
JESD-609 code e3 e3 e3 -
Humidity sensitivity level 1 1 1 -
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) -

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