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MT48LC16M16A2P-6A:G

Description
Memory interface type: Parallel Memory capacity: 256Mb (16M x 16) Working voltage: 3V ~ 3.6V Memory type: Volatile 256-Mbit (16M x 16bit), working voltage: 3.3V
Categorystorage    DDR memory   
File Size1MB,87 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Download Datasheet Parametric View All

MT48LC16M16A2P-6A:G Overview

Memory interface type: Parallel Memory capacity: 256Mb (16M x 16) Working voltage: 3V ~ 3.6V Memory type: Volatile 256-Mbit (16M x 16bit), working voltage: 3.3V

MT48LC16M16A2P-6A:G Parametric

Parameter NameAttribute value
Memory architecture (format)DRAM
Memory interface typeParallel
memory capacity256Mb (16M x 16)
Operating Voltage3V ~ 3.6V
memory typeVolatile
256Mb: x4, x8, x16 Automotive SDRAM
Features
Automotive SDR SDRAM
MT48LC64M4A2 – 16 Meg x 4 x 4 banks
MT48LC32M8A2 – 8 Meg x 8 x 4 banks
MT48LC16M16A2 – 4 Meg x 16 x 4 banks
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
and auto refresh modes
• Self refresh mode (not available on AAT devices)
• Auto refresh
– 64ms, 8192-cycle (commercial and industrial)
– 16ms, 8192-cycle (automotive)
• LVTTL-compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• AEC-Q100
• PPAP submission
• 8D response time
Options
– 54-pin TSOP II OCPL
1
(400 mil)
Pb-free
– 60-ball FBGA (x4, x8) (8mm x 16mm)
– 60-ball FBGA (x4, x8) (8mm x 16mm)
Pb-free
– 54-ball VFBGA (x16) (8mm x 14 mm)
– 54-ball VFBGA (x16) (8mm x 14 mm)
Pb-free
– 54-ball VFBGA (x16) (8mm x 8 mm)
– 54-ball VFBGA (x16) (8mm x 8 mm)
Pb-free
Timing – cycle time
– 6ns @ CL = 3 (x8, x16 only)
– 7.5ns @ CL = 3 (PC133)
– 7.5ns @ CL = 2 (PC133)
Self refresh
– Standard
– Low power
Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
Revision
Notes:
1.
2.
3.
4.
Off-center parting line.
Only available on Revision D.
Only available on Revision G.
Contact Micron for availability.
Marking
P
FB
BB
FG
2
BG
2
F4
3
B4
3
-6A
-75
-7E
None
L
4
AIT
AAT
4
:D/:G
Options
• Configurations
– 64 Meg x 4 (16 Meg x 4 x 4 banks)
– 32 Meg x 8 (8 Meg x 8 x 4 banks)
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = 2 CLK
• Plastic package – OCPL
1
– 54-pin TSOP II OCPL
1
(400 mil)
(standard)
Table 1: Key Timing Parameters
CL = CAS (READ) latency
Speed Grade
-6A
-7E
-75
-7E
-75
Clock
Frequency
167 MHz
143 MHz
133 MHz
133 MHz
100 MHz
Marking
64M4
32M8
16M16
A2
TG
Access Time
CL = 2
5.4ns
6ns
CL = 3
5.4ns
5.4ns
5.4ns
Setup Time
1.5ns
1.5ns
1.5ns
1.5ns
1.5ns
Hold Time
0.8ns
0.8ns
0.8ns
0.8ns
0.8ns
PDF: 09005aef848d99e8
256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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