Preliminary Datasheet
LPM9926
20V Dual N-Channel MOSFET
General Description
The LPM9926 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is suitable
for use as a uni-directional or bi-directional load
switch.
Features
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Order Information
LPM9926
□□
□
F: Pb-Free
Package Type
SO：SOP8
Pin Description
Pin Number
1
2
3
4
5
6
7
8
Pin Description
S2
G2
S1
G1
D2
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
D1
Pin Configurations
S2
G2
S1
G1
1
2
SOP8
3
4
6
5
D1
D1
8
7
D2
D2
Marking Information
Part
LPM9926SOF
Marking
LPS
LPM9926
YWX
Package
SOP8
Shipping
4K/REEL
Marking indication:
Y:Production year W:Production week
X:Production batch.
LPM9926-00
Jan.-2018
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 1 of 7
Preliminary Datasheet
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Maximum
20
±12
7.6
6.1
38
2
1.28
-55 to 150
LPM9926
Unit
V
A
W
℃
Junction and Storage Temperature Range
Thermal resistance ratings
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Maximum Junction-to-Lead
t ≤ 10s
Steady State
Steady State
Symbol
R
θJA
R
θJL
TYP
48
74
32
Unit
℃/W
℃/W
℃/W
LPM9926-00
Jan.-2018
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 7
Preliminary Datasheet
Electrical Characteristics
Electrical Characteristics (T
J
=25℃ unless otherwise noted)
LPM9926
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250μA, V
GS
=0V
V
DS
=20V, V
GS
=0V
T
J
=55℃
V
DS
=0V, V
GS
=12V
V
DS
=V
GS,
I
D
=250μA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=7.6A
T
J
=125℃
V
GS
=4.5V, I
D
=7A
V
GS
=2.5V, I
D
=6A
V
DS
=5V, I
D
=7.6A
I
S
=1A, V
GS
=0V
Min
20
Typ
Max
Units
V
1
5
±100
0.4
38
16.5
25
18.5
24
25
0.7
1
2.5
525
23
30
28
38
0.75
1.1
μA
nA
V
A
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
g
FS
V
SD
I
S
C
iss
C
oss
C
rss
R
g
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
tf
t
rr
Q
rr
Forward Transconductance
Diode Forward Voltage
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F=
7.6A, dI/dt=100A/μs
I
F=
7.6A, dI/dt=100A/μs
V
GS
=10V, V
DS
=20V, R
L
= 2Ω,
R
GEN=
3Ω
V
GS
=10V, V
DS
=15V, I
D
=7.6A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
DYNAMIC PARAMETERS
95
75
1.7
12.5
6
1
2
3
7.5
20
6
14
6
SWITCHING PARAMETERS
Typical Characteristics
LPM9926-00
Jan.-2018
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 3 of 7
Preliminary Datasheet
LPM9926
LPM9926-00
Jan.-2018
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 4 of 7
Preliminary Datasheet
LPM9926
LPM9926-00
Jan.-2018
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 5 of 7
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