Preliminary Datasheet
LPM9029C
N and P-Channel Enhancement Power MOSFET
General Description
The LPM9029C integrates N-Channel and P-Channel
enhancement MOSFET Transistor. It uses advanced
trench technology and design to provide excellent
R
DS (ON)
with low gate charge. This device is suitable
for using in DC-DC conversion, power switch and
charging circuit.
Standard Product LPM9029C is
PMOS:
V
PDS
=-20V, I
PD
=-4.5A
R
PDS(ON)
< 100mΩ @ V
GS
=-2.5V
R
PDS(ON)
< 68mΩ @ V
GS
=-4.5V
F: Pb-Free
Package Type
SO: SOP-8
Super high density cell design
Extremely Low Threshold Voltage
Small package SOP-8
Pb-free and Halogen-free.
Features
Trench Technology
NMOS:
V
NDS
=20V, I
ND
=12A
R
NDS(ON)
< 26mΩ @ V
GS
=2.5V
R
NDS(ON)
< 20mΩ @ V
GS
=4.5V
Order Information
LPM9029C
□ □ □
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Shipping
4K/REEL
Marking Information
Device
LPM9029C
Marking
Package
SOP-8
Pin Description
Pin Number
1
2
3
4
5,6
7,8
Pin Description
Source Of NMOS
Gate Of NMOS
Source Of PMOS
Gate Of PMOS
Drain Of PMOS
Drain Of NMOS
Pin Configurations
S
NMOS
G
NMOS
S
PMOS
G
PMOS
1
LPM9029C
2
3
4
SOP-8
TOP VIEW
8
7
6
5
D
NMOS
D
NMOS
D
PMOS
D
PMOS
LPM9029C-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 1 of 5
Preliminary Datasheet
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA=25°C
TA=25°C
T
J
T
L
T
stg
Symbol
V
DS
V
GS
NMOS
20
±10
12
1.5
-40 to 150
260
-55 to 150
LPM9029C
PMOS
-20
±10
-4.5
Unit
V
A
W
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
（Note b）
Symbol
Steady State
R
θ
JA
Typ.
50
Unit
℃/W
LPM9029C-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 5
Preliminary Datasheet
Electrical Characteristics
N-Channel MOSFET Electrical Characteristics：
LPM9029C
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
（
Note c
）
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
CAPACITANCES, CHARGES
（
Note d
）
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
（
Note d
）
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
(Note c)
Symbol
BV
DSS
I
DSS
I
GSS
Test Condition
V
GS
= 0 V, I
D
=250uA
V
DS
=20V, V
GS
= 0V
V
DS
=0V, V
GS
=±10V
Min
Typ.
20
Max
Units
V
500
±100
nA
nA
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
=250uA
V
GS
= 2.5V, I
D
=3A
V
GS
= 4.5V, I
D
=6A
V
DS
=2.5V, I
D
=6A
0.4
0.95
26
20
V
mΩ
S
4
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
V
GS
= 0V,
f =1.0MHz
V
DS
=15V
V
GS
=4.5V,
V
DS
=15V,
I
D
=6A
1550
300
180
13
5.5
3.5
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=10V,
V
DD
=20V,
I
D
=1.0A,
R
G
=6Ω
30
20
100
80
ns
V
SD
V
GS
= 0 V, I
S
=1A
0.2
1.0
V
LPM9029C-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 3 of 5
Preliminary Datasheet
P-Channel MOSFET Electrical Characteristics：
LPM9029C
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
（
Note c
）
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
CAPACITANCES, CHARGES
（
Note d
）
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
（
Note d
）
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
(Note c)
Note：
Symbol
BV
DSS
I
DSS
I
GSS
Test Condition
V
GS
= 0 V, I
D
=-250uA
V
DS
=-20V, V
GS
= 0V
V
DS
=0V, V
GS
=±10V
Min
-20
Typ.
Max
Units
V
-500
±100
nA
nA
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
=-250uA
V
GS
= -2.5V, I
D
=-2A
V
GS
= -4.5V, I
D
=-4.5A
V
DS
= -4.5V, I
D
=-4.5A
-0.4
-0.95
100
68
V
mΩ
S
2
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
V
GS
= 0V,
f = 1.0MHz
V
DS
=-15©©V
V
GS
=- 4.5V,
V
DS
=-15V,
I
D
=-4.5A
1600
350
300
30
5.5
8
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=-10V,
V
DD
=-20V,
I
D
=-1.0A,
R
G
=6Ω
10
15
110
70
ns
V
SD
V
GS
= 0 V, I
S
=-1A
-0.2
-0.95
V
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t＜10s.
c. Pulse width<295μs, Duty Cycle<2%.
d. Guaranteed by design, not subject to production.
LPM9029C-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 4 of 5
Preliminary Datasheet
Packaging Information
LPM9029C
LPM9029C-01
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Page 5 of 5
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