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KF4N60F-U/PSF

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 2.5Ω @ 2A, 10V Maximum power Dissipation (Ta=25°C): 37.9W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size382KB,6 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KF4N60F-U/PSF Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 2.5Ω @ 2A, 10V Maximum power Dissipation (Ta=25°C): 37.9W(Tc) Type: N-channel

KF4N60F-U/PSF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C4A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance2.5Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)37.9W(Tc)
typeN channel
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
・Drain-Source
ON Resistance : R
DS(ON)
=2.5Ω @V
GS
= 10V
・Qg(typ)
= 10nC
D
N
N
A
KF4N60F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
C
F
O
B
E
DIM
MILLIMETERS
K
・V
DSS
= 600V, I
D
= 4A
L
M
R
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
P
D
Derate above 25℃
T
j
T
stg
0.3
150
-55½150
W/℃
I
DP
E
AS
E
AR
dv/dt
SYMBOL
V
DSS
V
GSS
I
D
2.4*
12*
130
3.3
4.5
37.9
mJ
mJ
V/ns
W
A
RATING
600
±30
4*
UNIT
V
V
1
H
2
3
1. GATE
2. DRAIN
3. SOURCE
Q
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_
10.16
+
0.2
_
15.87
+
0.2
_
2.54
+
0.2
_
0.1
0.8
+
_
3.18
+
0.1
_
3.3
+
0.1
_
12.57
+
0.2
_
0.1
0.5
+
_
13.0
+
0.5
_
3.23
+
0.1
1.47 MAX
1.47 MAX
_
2.54
+
0.2
_
6.68
+
0.2
_
4.7
+
0.2
_
2.76
+
0.2
G
* Single Gauge Lead Frame
TO-220IS (1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R
thJC
R
thJA
3.3
62.5
℃/W
℃/W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2013. 6. 03
Revision No : 0
J
1/6
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