IRF5210PBF datasheet, PDF - EEWORLD Datasheet

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IRF5210PBF: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 40A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 60mΩ @ 24A, 10V Maximum power dissipation (Ta= 25°C): 200W Type: P channel P channel, -100V, -40A, 60mΩ@-10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size190KB，9 Pages; ManufacturerInternational Rectifier(Infineon); Websitehttp://www.irf.com

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IRF5210PBF Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 40A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 60mΩ @ 24A, 10V Maximum power dissipation (Ta= 25°C): 200W Type: P channel P channel, -100V, -40A, 60mΩ@-10V

IRF5210PBF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	40A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	60mΩ @ 24A,10V
Maximum power dissipation (Ta=25°C)	200W
type	P channel

IRF5210PBF Related Products

	IRF5210PBF
Description	Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 40A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 60mΩ @ 24A, 10V Maximum power dissipation (Ta= 25°C): 200W Type: P channel P channel, -100V, -40A, 60mΩ@-10V
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	40A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	60mΩ @ 24A,10V
Maximum power dissipation (Ta=25°C)	200W
type	P channel

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