IRF7413TRPBF datasheet, PDF - EEWORLD Datasheet

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IRF7413TRPBF: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 11mΩ @ 7.3A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: N channel N channel, 30V, 13A, 11mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size258KB，9 Pages; ManufacturerInternational Rectifier(Infineon); Websitehttp://www.irf.com

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IRF7413TRPBF Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 11mΩ @ 7.3A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: N channel N channel, 30V, 13A, 11mΩ@10V

IRF7413TRPBF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	13A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	11mΩ @ 7.3A,10V
Maximum power dissipation (Ta=25°C)	2.5W
type	N channel

IRF7413TRPBF Related Products

	IRF7413TRPBF
Description	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 11mΩ @ 7.3A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: N channel N channel, 30V, 13A, 11mΩ@10V
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	13A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	11mΩ @ 7.3A,10V
Maximum power dissipation (Ta=25°C)	2.5W
type	N channel

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