SPA11N60CFD datasheet, PDF - EEWORLD Datasheet

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SPA11N60CFD: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 5V @ 1.9mA Drain-source on-resistance: 440mΩ @ 7A, 10V Maximum power consumption Dispersion (Ta=25°C): 33W (Tc) Type: N channel N channel, 600V, 11A, 0.44Ω@10V; CategoryDiscrete semiconductor The transistor; File Size554KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SPA11N60CFD Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 5V @ 1.9mA Drain-source on-resistance: 440mΩ @ 7A, 10V Maximum power consumption Dispersion (Ta=25°C): 33W (Tc) Type: N channel N channel, 600V, 11A, 0.44Ω@10V

SPA11N60CFD Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	11 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.44 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	33 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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SPA11N60CFD

CoolMOS

Power Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

Product Summary

DS(on),max

D1)

600

0.44

PG-TO220-3-31

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified for industrial grade applications according to JEDEC

Type

SPA11N60CFD

Package

TO-220-3-31

Ordering Code

SP000216317

Marking

11N60CFD

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=100 °C

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive

2),3)

Avalanche current, repetitive

2),3)

Drain source voltage slope

Reverse diode dv /dt

Maximum diode commutation speed

Gate source voltage

D,pulse

dv /dt

di /dt

=11 A,

=480 V,

=125 °C

=11 A,

=480 V,

=125 °C

static

AC (f >1 Hz)

Power dissipation

Operating and storage temperature

tot

stg

=25 °C

=5.5 A,

=50 V

=11 A,

=50 V

Value

340

0.6

600

±20

±30

-55 ... 150

°C

V/ns

A/µs

Unit

Rev. 1.4

page 1

2010-12-21

SPA11N60CFD Related Products

	SPA11N60CFD	SPA11N60CFDXKSA1
Description	Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 5V @ 1.9mA Drain-source on-resistance: 440mΩ @ 7A, 10V Maximum power consumption Dispersion (Ta=25°C): 33W (Tc) Type: N channel N channel, 600V, 11A, 0.44Ω@10V	MOSFET N-CH 600V 11A TO220-3
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	compliant	compliant
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	340 mJ	340 mJ
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	11 A	11 A
Maximum drain-source on-resistance	0.44 Ω	0.44 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	28 A	28 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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