Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 75A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2mΩ @ 75A, 10V Maximum power dissipation (Ta=25°C): 300W(Tc) Type: N channel
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | LEAD FREE, PLASTIC, D2PAK-3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 15 weeks |
| Other features | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Avalanche Energy Efficiency Rating (Eas) | 540 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (Abs) (ID) | 270 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.002 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Maximum pulsed drain current (IDM) | 1080 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRF2804STRLPBF | |
|---|---|
| Description | Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 75A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2mΩ @ 75A, 10V Maximum power dissipation (Ta=25°C): 300W(Tc) Type: N channel |
| Is it Rohs certified? | conform to |
| package instruction | LEAD FREE, PLASTIC, D2PAK-3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 15 weeks |
| Other features | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Avalanche Energy Efficiency Rating (Eas) | 540 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (Abs) (ID) | 270 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.002 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Maximum pulsed drain current (IDM) | 1080 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
