DMN2016LHAB-7 datasheet, PDF - EEWORLD Datasheet

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DMN2016LHAB-7: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 7.5A Gate-source threshold voltage: 1.1V @ 250uA Drain-source on-resistance: 15.5mΩ @ 4A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.2W Type: Dual N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size294KB，6 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN2016LHAB-7 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 7.5A Gate-source threshold voltage: 1.1V @ 250uA Drain-source on-resistance: 15.5mΩ @ 4A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.2W Type: Dual N-channel

DMN2016LHAB-7 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	7.5A
Gate-source threshold voltage	1.1V @ 250uA
Drain-source on-resistance	15.5mΩ @ 4A,4.5V
Maximum power dissipation (Ta=25°C)	1.2W
type	Dual N-channel

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