DMP3056LSD
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
45mΩ @ V
GS
= -10V
65mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
-6.9A
-5.1A
Features
•
•
•
•
•
•
•
•
•
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.072g (approximate)
Applications
•
•
•
Power Management Functions
Backlighting
DC-DC Converters
SO-8
S1
G1
S2
G2
TOP VIEW
TOP VIEW
Internal Schematic
D1
D1
D2
D2
D1
D2
G1
S1
P-Channel MOSFET
G2
S2
P-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMP3056LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
P3056LD
YY WW
1
4
1
P3056LD
YY WW
4
= Manufacturer’s Marking
P3056LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP3056LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
V
DSS
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
I
DM
Value
-30
±20
-6.9
-5.8
-24
Units
V
V
A
A
NEW PRODUCT
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
5.
6.
7.
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
G
Min
-30
⎯
⎯
-1
⎯
⎯
Typ
⎯
⎯
⎯
-1.7
⎯
⎯
Max
⎯
-1
±100
±800
-2.1
45
65
⎯
-1.2
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -6.0A
V
GS
= -4.5V, I
D
= -5.0A
V
DS
= -10V, I
D
= -5.3A
V
GS
= 0V, I
S
= -1.7A
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
⎯
-0.5
⎯
⎯
⎯
⎯
8
⎯
722
114
92
3.3
Q
G
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6.8
13.7
1.6
4.2
6.4
5.3
26.5
14.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
ns
Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
Pulse width
≤10μS,
Duty Cycle
≤1%.
Short duration pulse test used to minimize self-heating effect.
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP3056LSD
12
11
10
-I
D
, DRAIN CURRENT (A)
9
8
7
6
5
4
3
2
1
0
0
0.5
1
V
GS
= -1.5V
V
GS
= -1.0V
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
= -10V
10
9
8
-I
D
, DRAIN CURRENT (A)
7
6
5
4
3
2
1
5
0
1
1.5
2
2.5
3
3.5
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= -4.5V
V
DS
= 5V
Pulsed
NEW PRODUCT
1.5 2 2.5 3 3.5 4 4.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.1
0.05
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
0.04
V
GS
= -4.5V
I
D
= -5.0A
0.03
V
GS
= -4.5V
0.02
V
GS
= -10V
I
D
= -6.0A
V
GS
= -10V
0.01
0.01
0.1
1
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 Static Drain-Source On-Resistance
vs. Ambient Temperature
3
-V
TH
, GATE THRESHOLD VOLTAGE (V)
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
1
-50
I
D
= -250µA
10,000
f = 1MHz
C, CAPACITANCE (pF)
1,000
C
iss
100
C
oss
C
rss
10
0
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
3 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP3056LSD
10
-I
S
, SOURCE CURRENT (A)
1
0.1
T
A
= 150°C
NEW PRODUCT
0.01
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.001
T
A
= -55°C
0.0001
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
0
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
GAUGE PLANE
SEATING PLANE
DETAIL A
h
A2 A A3
e
D
b
7
°~
9
°
45
°
DETAIL A
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
4 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP3056LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
NEW PRODUCT
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
5 of 5
www.diodes.com
January 2014
© Diodes Incorporated
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