4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Features
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating temperature range - 55 ° to 110 °C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37,
4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series
consists of a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 6-lead
DIP package different lead forming options.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Feb, 2014
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1µs P.W,300pps)
60
1
6
100
mA
A
V
mW
Detector
P
D
B
VCEO
B
VCBO
B
VECO
B
VEBO
Power dissipation
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage
150
80
80
7
7
mW
V
V
V
V
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Feb, 2014
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
Typ
1.24
Max
1.4
5
-
Units
V
µA
pF
Notes
-
-
-
45
Detector Characteristics
Symbol
B
VCEO
B
VECO
B
VCBO
B
VEBO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base Breakdown
Emitter-Base Breakdown
Collector-Emitter
4N25,4N26,4N27,4N28
V
CE
= 10V, I
F
=0mA
-
-
-
-
-
-
50
50
20
nA
nA
H11A1,A2,A3,A4,A5
4N35,4N36,4N37,4N38
V
CE
=60V, I
F
=0mA
V
CB
= 10V, I
F
=0mA
Test Conditions
I
C
= 0.1mA
I
E
= 0.1mA
I
C
= 0.1mA
I
E
= 0.1mA
Min
80
7
80
7
Typ
-
-
-
-
Max
-
-
-
-
Units
V
V
V
V
nA
Notes
I
CEO
Dark Current
I
CBO
Collector-Base Dark Current
Transfer Characteristics
Symbol
Parameters
4N35, 4N36, 4N37
4N25,4N26, 4N38,
Current
20
H11A2, H11A3
I
F
= 10mA, V
CE
= 10V
4N27, 4N28, H11A4
Ratio
H11A1
H11A5
4N25,4N26,
I
F
= 50mA, I
C
= 2mA
Collector-E
4N27,4N28
4N35,4N36,4N37
H11A1,H11A2,
H11A3,H11A4,H11A5
4N38
I
F
= 20mA, I
C
= 4mA
V
IO
= 500V
DC
f= 1MHz
-
1x10
11
0.25
pF
Rev 1
Feb, 2014
-
1.0
I
F
= 10mA, I
C
= 0.5mA
-
Voltage
-
0.4
-
-
0.3
V
Saturation
mitter
-
-
0.5
50
30
-
-
-
-
10
-
-
%
-
-
Test Conditions
Min
100
Typ
-
Max
-
Units
Notes
CTR
Transfer
V
CE(SAT)
R
IO
C
IO
Isolation Resistance
Isolation Capacitance
CT Micro
Proprietary & Confidential
Page 3
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Switching Characteristics
Symbol
Parameters
4N25,4N26,4N27,4N28
Test Conditions
I
F
= 10mA, V
CC
= 10V, R
L
=
Min
-
Typ
4.3
Max
9.8
Units
Notes
t
on
Turn On
Time
H11A1,A2,A3,A4,A5
4N35,4N36,4N37,4N38
100
µs
I
c
= 2mA, V
CC
= 10V, R
L
=
-
100
I
F
= 10mA, V
CC
= 10V, R
L
=
-
3.9
9.8
µs
100
I
c
= 2mA, V
CC
= 10V, R
L
=
-
100
6.9
11.5
9.8
11.5
4N25,4N26,4N27,4N28
t
off
Turn Off
Time
H11A1,A2,A3,A4,A5
4N35,4N36,4N37,4N38
CT Micro
Proprietary & Confidential
Page 4
Rev 1
Feb, 2014
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Feb, 2014
京公网安备 11010802033920号
EEWORLD
