CT827 Series
DC Input 8-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
DC input with transistor output
Operating temperature range - 55 °C to 110 °C
External Creepage ≥ 7.5mm (S/SL Type)
External Creepage ≥ 8.0mm (SLM Type)
RoHS compliant
REACH compliance
Green material
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT827 series consists of dual channels each
contains a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 8-lead
DIP package different lead forming options.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Apr, 2019
CT827 Series
DC Input 8-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
P
TOT
T
OPR
T
STG
T
SOL
Isolation voltage
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
mW
o
C
o
C
o
C
Notes
Emitter
(1 circuit)
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Emitter power dissipation
(≤1μs P.W,300pps)
60
1
6
100
mA
A
V
mW
Detector
(1 circuit)
P
D
B
VCEO
B
VECO
I
C
Detector power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
7
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Apr, 2019
CT827 Series
DC Input 8-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
Typ
1.24
Max
1.4
5
30
Units
V
µA
pF
Notes
-
-
-
10
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V, I
F
=0mA
Min
80
7
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
Parameters
CT827
Test Conditions
Min
50
Typ
Max
600
160
260
Units
Notes
CTR
Current Transfer Ratio
CT827A
CT827B
I
F
= 5mA, V
CE
= 5V
80
130
%
Collector-Emitter Saturation
V
CE(SAT)
Voltage
I
F
= 20mA, I
C
= 1mA
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
-
5x10
10
0.1
0.2
V
Ω
R
IO
C
IO
0.5
1
pF
Switching Characteristics
Symbol
t
r
t
f
Rise Time
Fall Time
Parameters
Test Conditions
I
C
= 2mA, V
CE
= 2V
R
L
= 100Ω
Min
-
-
Typ
6
8
Max
18
Units
µs
Notes
18
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Apr, 2019
CT827 Series
DC Input 8-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 2
Apr, 2019
CT827 Series
DC Input 8-Pin Phototransistor Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Rev 2
Apr, 2019
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