FLL1200IU-3
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 120W (Typ.)
High PAE: 44%.
Broad Frequency Range: 2400 to 2500 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• WLL Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
187.5
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Note 1: The device shall be measured at a constant VGS condition.
Symbol
I
DSS
gm
V
p
V
GSO
P
out
GL
I
DSR
η
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 28.8A
V
DS
= 5V, I
DS
= 2.88A
I
GS
= -2.88mA
V
DS
= 12V
f = 2.5 GHz
I
DS
= 5.0A
Pin = 41.0dBm
Note 1
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
49.8
10.0
-
-
-
48
24
-2.0
-
50.8
11.0
20
44
0.6
-
-
-3.5
-
-
-
30
-
0.8
Unit
A
S
V
V
dBm
dB
A
%
°C/W
Edition 1.4
December 1999
1
FLL1200IU-3
L-Band High Power GaAs FET
POWER DERATING CURVE
200
OUTPUT POWER &
η
add vs. INPUT POWER
52
Total Power Dissipation (mW)
50
150
VDS = 12V
IDS = 5.0A
f = 2.5GHz
Pout
50
48
Output Power (dBm)
46
100
44
40
50
42
η
add
30
40
0
0
50
100
150
200
20
38
10
Ambient Temperature (°C)
26
28
30
32
34
36
38
40
0
42
Input Power (dBm)
OUTPUT POWER vs. FREQUENCY
52
51
49
47
45
43
41
31dBm
VDS = 12V
IDS = 5A
Pin=42dBm
41dBm
39dBm
Output Power (dBm)
35dBm
39
37
27dBm
2.35
2.4
2.45
2.5
2.55
2.6
2.65
2.7
Frequency (GHz)
2
η
add (%)
FLL1200IU-3
L-Band High Power GaAs FET
OUTPUT POWER vs. IMD
VDS = 12V
IDS = 5.0A
f = 2.5GHz
∆f
= 1.0MHz
2-tone test
-25
IM3
-30
-35
IMD (dBc)
IM5
-40
-45
-50
-55
-60
33
35
37
39
41
43
45
Total Output Power (dBm)
S-PARAMETERS
VDS = 12V, IDS = 2.5A
FREQUENCY
(MHZ)
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
Download S-Parameters, click here
S11
MAG
.924
.925
.916
.919
.916
.918
.915
.921
.916
.916
.907
.879
.797
.504
.142
.473
.639
.722
.784
.833
.851
.844
.802
.748
.702
.720
.778
.827
.859
.878
.887
S21
ANG
167.9
166.5
165.4
164.3
162.7
161.3
159.2
156.9
153.5
149.8
144.4
136.3
122.7
98.3
-176.2
-169.7
177.2
167.8
159.2
148.2
134.5
117.7
94.3
62.0
17.6
-31.3
-71.5
-99.9
-119.2
-132.7
-143.2
S12
ANG
MAG
.004
.005
.006
.006
.008
.008
.008
.009
.009
.011
.013
.015
.021
.032
.038
.037
.036
.037
.037
.035
.033
.029
.027
.024
.021
.018
.014
.012
.011
.010
.010
S22
ANG
12.6
7.2
-4.6
-9.9
-13.2
-26.4
-34.9
-42.6
-57.7
-77.0
-92.5
-119.8
-156.8
151.7
85.2
40.0
2.3
-30.6
-66.6
-99.5
-129.0
-152.6
-175.5
163.0
139.1
119.7
99.4
89.2
76.1
70.3
69.7
MAG
.405
.420
.444
.476
.517
.573
.643
.732
.854
1.032
1.310
1.777
2.631
3.957
4.372
3.661
3.009
2.643
2.323
1.962
1.556
1.239
1.012
.847
.683
.511
.352
.236
.163
.115
.086
MAG
.894
.883
.868
.853
.837
.819
.801
.780
.760
.734
.699
.642
.532
.369
.488
.564
.491
.308
.129
.348
.582
.730
.810
.857
.886
.905
.913
.920
.915
.919
.918
ANG
166.2
165.0
163.6
162.3
161.3
160.2
158.8
157.4
155.9
153.8
151.1
147.0
142.7
154.6
175.8
165.5
151.9
143.7
-166.4
-122.7
-132.0
-142.8
-152.1
-159.7
-165.6
-171.0
-175.3
-178.5
177.2
173.7
170.8
19.7
10.8
1.6
-9.2
-19.8
-31.5
-43.6
-56.3
-69.8
-83.6
-98.8
-116.9
-141.7
178.8
125.5
87.7
55.7
26.2
-4.8
-36.6
-65.9
-91.5
-115.7
-141.4
-169.5
162.6
137.6
118.5
103.8
92.2
82.7
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
3
FLL1200IU-3
L-Band High Power GaAs FET
Case Style "IU"
23.9±0.25
(0.941)
2.0 MIN.
12-R0.5
1
2
0.1
(0.004)
6
3
2.0
(0.078)
2.0 MIN.
4-R1.3
5
4
15.5±0.15
(0.610)
17.4±0.15
(0.685)
8.0±0.15
(0.315)
1.9±0.15
(0.075)
2.4±0.15
(0.094)
10.0±0.2
(0.393)
30.4±0.25
(1.181)
34.0±0.25
(1.339)
4.5 Max.
(0.177)
1, 2:
3:
4, 5:
6:
0.7±0.2
Gate
Source
Drain
Source
Unit: mm (inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0299M200
4
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