Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Fairchild |
package instruction | SMD1-3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (Abs) (ID) | 17 A |
Maximum drain current (ID) | 17 A |
Maximum drain-source on-resistance | 0.27 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CBCC-N3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 60 W |
Maximum pulsed drain current (IDM) | 51 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
FSYA9250D3 | FSYA9250R1 | |
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Description | Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3 | Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3 |
Is it Rohs certified? | incompatible | incompatible |
Maker | Fairchild | Fairchild |
package instruction | SMD1-3 | CHIP CARRIER, R-CBCC-N3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknown | compliant |
ECCN code | EAR99 | EAR99 |