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FSYA9250D3

Description
Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3
CategoryThe transistor   
File Size107KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FSYA9250D3 Overview

Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3

FSYA9250D3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionSMD1-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)17 A
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.27 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)60 W
Maximum pulsed drain current (IDM)51 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

FSYA9250D3 Related Products

FSYA9250D3 FSYA9250R1
Description Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3 Power Field-Effect Transistor, 17A I(D), 200V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD1-3
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction SMD1-3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99

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