MSMBG51CA/TR datasheet, PDF - EEWORLD Datasheet

MSMBG51CA/TR: DescriptionESD Suppressor/TVS Diode; CategoryDiscrete semiconductor diode; File Size523KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MSMBG51CA/TR Overview

ESD Suppressor/TVS Diode

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	R-PDSO-G2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	62.7 V
Minimum breakdown voltage	56.7 V
Breakdown voltage nominal value	59.7 V
Maximum clamping voltage	82.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-215AA
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	51 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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