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Jantx2N3057A/TR

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT)
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size261KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

Jantx2N3057A/TR Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT)

Jantx2N3057A/TR Parametric

Parameter NameAttribute value
MakerMicrosemi
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
RoHSN
technologySi
Installation styleThrough Hole
Package/boxTO-46-3
Transistor polarityNPN
ConfigurationSingle
Collector-emitter maximum voltage VCEO80 V
Collector-base voltage VCBO140 V
Emitter-Base voltage VEBO7 V
Collector-emitter saturation voltage0.5 V
Maximum DC collector current1 A
Minimum operating temperature- 65 C
Maximum operating temperature+ 200 C
DC current gain hFE maximum300 at 500 mA, 10 V
DC collector/Base Gain hfe Min15 at 1 A, 10 V
Pd-power dissipation500 mW
Factory packaging quantity1
2N3057A
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
Compliant
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
DESCRIPTION
This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability
applications. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N3057 number.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
Rad hard levels are also available per MIL-PRF-19500/391.
(For RHA datasheet see
JANSD2N3057A.)
RoHS compliant by design.
TO-46 (TO-206AB)
Package
Also available in:
TO-39 (TO-205AD)
(short-leaded)
2N3019S
APPLICATIONS / BENEFITS
Low profile metal TO-46 leaded package.
Light weight.
General–purpose switching and amplifier applications.
Military and high-reliability applications.
TO-5 package
(long-leaded)
2N3019
TO-18 (TO-206AA)
(leaded)
2N3700
UB package
(surface mount)
2N3700UB
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Impedance Junction-to-Ambient
Thermal Impedance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
o
(1)
Total Power Dissipation:
@ T
A
= +25 C
o
(2)
@ T
C
= +25 C
Notes:
1. Derate linearly 2.3 mW/°C for T
A
+25 °C.
2. Derate linearly 10.3 mW/°C for T
C
≥ +25 °C.
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
-65 to +200
325
80
80
140
7.0
1.0
0.5
1.8
Unit
C
o
C/W
o
C/W
V
V
V
A
W
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0185-1, Rev. 1 (121562)
©2012 Microsemi Corporation
Page 1 of 6

Jantx2N3057A/TR Related Products

Jantx2N3057A/TR JANS2N3057A/TR Jantxv2N3057A/TR 2N3057A/TR
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT)
Maker Microsemi Microsemi Microsemi Microsemi
Product Category Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT)
RoHS N N N N
technology Si Si Si Si
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-46-3 TO-46-3 TO-46-3 TO-46-3
Transistor polarity NPN NPN NPN NPN
Configuration Single Single Single Single
Collector-emitter maximum voltage VCEO 80 V 80 V 80 V 80 V
Collector-base voltage VCBO 140 V 140 V 140 V 140 V
Emitter-Base voltage VEBO 7 V 7 V 7 V 7 V
Collector-emitter saturation voltage 0.5 V 0.5 V 0.5 V 0.5 V
Maximum DC collector current 1 A 1 A 1 A 1 A
Minimum operating temperature - 65 C - 65 C - 65 C - 65 C
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
DC current gain hFE maximum 300 at 500 mA, 10 V 300 at 500 mA, 10 V 300 at 500 mA, 10 V 300 at 500 mA, 10 V
DC collector/Base Gain hfe Min 15 at 1 A, 10 V 15 at 1 A, 10 V 15 at 1 A, 10 V 15 at 1 A, 10 V
Pd-power dissipation 500 mW 0.5 W 500 mW 1.8 W
Factory packaging quantity 1 1 1 100
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