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MT25QL128ABA1EW7-0SIT TR

Description
NOR Flash SERIAL NOR SLC 32MX4 WPDFN
Categorysemiconductor    Memory IC    NOR flash memory   
File Size1MB,94 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT25QL128ABA1EW7-0SIT TR Overview

NOR Flash SERIAL NOR SLC 32MX4 WPDFN

MT25QL128ABA1EW7-0SIT TR Parametric

Parameter NameAttribute value
MakerMicron
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxWDFN-8
seriesMT25QL
storage128 Mbit
maximum clock frequency133 MHz
Interface TypeSPI
organize16 M x 8
Timing typeSynchronous
Data bus width8 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.35 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
storage typeNOR
speed133 MHz
standardNot Supported
Factory packaging quantity4000
unit weight150 mg
128Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QL128ABA
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased through-
put up to 90 MB/s
• Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BA18h)
– Extended device ID: two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 2.7–3.6V
• Density
– 128Mb
• Device stacking
– Monolithic
• Device generation
• Die revision
• Pin configuration
– RESET# and HOLD#
• Sector Size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 16-pin SOP2, 300 mils body width
(SO16W)
– 8-pin SOP2, 208 mils body width
(SO8W)
– 24-ball T-PBGA, 05/6mm x 8mm
(TBGA24)
– 24-ball T-PBGA 05/6mm x 8mm (4 x
6 array)
– W-PDFN-8 8mm x 6mm (MLP8 8mm
x 6mm)
– W-PDFN-8 6mm x 5mm (MLP8 6mm
x 5mm)
• Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
Marking
L
128
A
B
A
8
E
SF
SE
12
14
W9
W7
0
S
A
IT
AT
CCMTD-1725822587-10223
mt25q_qlhs_L_128_ABA_xxT.pdf - Rev. J 05/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

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