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PTVA120252MT-V1-R1K

Description
Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET
Categorysemiconductor    Discrete semiconductor    The transistor    The RF transistor    Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET)   
File Size403KB,10 Pages
ManufacturerWolfspeed (Cree)
Environmental Compliance
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Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET

PTVA120252MT-V1-R1K Parametric

Parameter NameAttribute value
MakerWolfspeed (Cree)
Product CategoryRadio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarityDual N-Channel
technologySi
Vds - drain-source breakdown voltage105 V
Rds On - drain-source on-resistance2.8 Ohms
Gain19.5 dB
Output Power25 W
Maximum operating temperature+ 225 C
Installation styleSMD/SMT
Package/boxPG-SON-16
EncapsulationReel
working frequency500 MHz to 1400 MHz
typeRF Power MOSFET
Number of channels2 Channel
Factory packaging quantity1000
Vgs - gate-source voltage10 V

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