Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET
Parameter Name | Attribute value |
Maker | Wolfspeed (Cree) |
Product Category | Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor |
Transistor polarity | Dual N-Channel |
technology | Si |
Vds - drain-source breakdown voltage | 105 V |
Rds On - drain-source on-resistance | 2.8 Ohms |
Gain | 19.5 dB |
Output Power | 25 W |
Maximum operating temperature | + 225 C |
Installation style | SMD/SMT |
Package/box | PG-SON-16 |
Encapsulation | Reel |
working frequency | 500 MHz to 1400 MHz |
type | RF Power MOSFET |
Number of channels | 2 Channel |
Factory packaging quantity | 1000 |
Vgs - gate-source voltage | 10 V |