PXAC203302FV-V1-R0 datasheet, PDF

PXAC203302FV-V1-R0: DescriptionRadio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET; Categorysemiconductor Discrete semiconductor The transistor The RF transistor Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET); File Size362KB，9 Pages; ManufacturerWolfspeed (Cree); Environmental Compliance

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Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET

Parameter Name	Attribute value
Maker	Wolfspeed (Cree)
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarity	Dual N-Channel
technology	Si
Vds - drain-source breakdown voltage	65 V
Rds On - drain-source on-resistance	88 mOhms
Gain	16 dB
Output Power	330 W
Maximum operating temperature	+ 225 C
Installation style	SMD/SMT
Package/box	H-37275-4
Encapsulation	Reel
working frequency	1880 MHz to 2025 MHz
type	RF Power MOSFET
Number of channels	2 Channel
Factory packaging quantity	250
Vgs - gate-source voltage	10 V

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