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1N5399

Description
1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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1N5399 Overview

1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

1N5399 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current50 A

1N5399 Related Products

1N5399 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398
Description 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41 RECTIFIER DIODE, DO-15 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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