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1N5396

Description
1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size195KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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1N5396 Overview

1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL

1N5391 THRU 1N5399
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.5 Amperes
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
1.5 ampere operation at T
L
=70 with no thermal runaway
Low reverse leakage
Construction utilizes void-free molded plastic technique
High temperature soldering guaranteed:
250 /10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3Kg) tension
Mechanical Data
Case:
DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.014 ounce, 0.39 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.228
0.102
0.028
1.000
Max.
0.299
0.142
0.034
-
Min.
5.8
2.6
0.71
25.40
mm
Max.
7.6
3.6
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N
5391
1N
5392
1N
5393
1N
5394
1N
5395
1N
5396
1N
5397
1N
5398
1N
5399
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.500" (12.7mm) lead length at T
L
=70
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) at T
A
=75
Maximum instantaneous forward voltage at1.5A T
A
=70
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=150
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
50.0
1.40
5.0
300.0
2.0
15.0
50.0
25.0
+150
-50 to +170
-50 to +175
500
350
500
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
A
S
F
/W
Typical reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Maximum DC blocking voltage temperature
Operating junction temperature range
Storage temperature range
T
A
T
J
T
STG
Notes:
(1) Measured with I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
1

1N5396 Related Products

1N5396 1N5391 1N5392 1N5393 1N5394 1N5395 1N5397 1N5398
Description 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41 RECTIFIER DIODE, DO-15 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL

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