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JANTX2N5339U3

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT) Power BJT
CategoryDiscrete semiconductor    The transistor   
File Size177KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTX2N5339U3 Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) Power BJT

JANTX2N5339U3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-276AA
package instructionCHIP CARRIER, R-XBCC-N3
Contacts5
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-276AA
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500/560
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
DEVICES
LEVELS
2N5339
2N5339U3
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
@ T
C
= +25°C
(3)
– U3
Operating & Storage Junction Temperature Range
Total Power Dissipation
Thermal Resistance, Junction-to Air
NOTES:
1) Derate linearly 5.71mW/°C for T
A
> 25°C
2) Derate linearly 100mW/°C for T
C
> 25°C
3) Derate linearly 434mW/°C for T
C
> 25°C – U3
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 50mAdc
Collector-Emitter Cutoff Current
V
CE
= 100Vdc
Collector-Emitter Cutoff Current
V
CE
= 90Vdc, V
BE
= 1.5Vdc
Collector-Base Cutoff Current
V
CB
= 100Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
(BR)CEO
I
CEO
I
CEX
I
CBO
I
EBO
100
100
1.0
1.0
100
Vdc
µAdc
µAdc
µAdc
µAdc
U-3
(TO-276AA)
Symbol
Min.
Max.
Unit
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
, T
stg
R
θJA
Value
100
100
6.0
1.0
5.0
1.0
17.5
75
-65 to +200
175
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
TO-39
(TO-205AD)
T4-LDS-0011 Rev. 3 (101764)
Page 1 of 4

JANTX2N5339U3 Related Products

JANTX2N5339U3 JAN2N5339U3
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) Power BJT Bipolar Transistor - Bipolar Junction Transistor (BJT) Power BJT
Is it Rohs certified? incompatible incompatible
Parts packaging code TO-276AA TO-276AA
package instruction CHIP CARRIER, R-XBCC-N3 CHIP CARRIER, R-XBCC-N3
Contacts 5 5
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 100 V 100 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-276AA TO-276AA
JESD-30 code R-XBCC-N3 R-XBCC-N3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Polarity/channel type NPN NPN
Certification status Qualified Qualified
Guideline MIL-19500/560 MIL-19500/560
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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