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S29NS128J0PBAW00

Description
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
Categorystorage    storage   
File Size792KB,85 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
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S29NS128J0PBAW00 Overview

110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories

S29NS128J0PBAW00 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFBGA, BGA48,12X18,20
Reach Compliance Codeunknow
Maximum access time65 ns
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
memory density134217728 bi
Memory IC TypeFLASH
memory width16
Number of departments/size4,255
Number of terminals48
word count8388608 words
character code8000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA48,12X18,20
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
ready/busyYES
Department size8K,32K
Maximum standby current0.00004 A
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
Base Number Matches1
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