FEP16xT, FEPF16xT, FEPB16xT
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Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
TO-220AB
ITO-220AB
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
(for ITO-220AB and TO-263AB package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
FEP16xT
PIN 1
PIN 3
PIN 2
CASE
3
1
FEPF16xT
PIN 1
PIN 3
PIN 2
2
3
1
D
2
PAK (TO-263AB)
K
2
1
FEPB16xT
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Circuit configurations
2 x 8.0 A
50 V to 600 V
200 A, 125 A
35 ns, 50 ns
0.95 V, 1.30 V, 1.50 V
150 °C
TO-220AB, ITO-220AB,
D
2
PAK (TO-263AB)
Common cathode
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs max.
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
Operating storage and temperature
range
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
200
50
35
50
100
70
100
150
105
150
200
140
200
16
125
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
-55 to +150
°C
Revision: 08-Jun-2018
Document Number: 88596
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT
V
AC
1500
V
Revision: 08-Jun-2018
Document Number: 88596
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
UNIT
16JT
V
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse
current per diode at rated DC
blocking voltage
Maximum reverse recovery
time per diode
Typical junction capacitance
per diode
TEST CONDITIONS
8.0 A
T
C
= 25 °C
I
R
T
C
= 100 °C
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
t
rr
C
J
35
85
500
50
60
ns
pF
SYMBOL
V
F (1)
0.95
10
1.30
1.50
μA
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
R
JC
FEP
2.2
FEPF
3.1
FEPB
2.2
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
FEP16JT-E3/45
FEPF16JT-E3/45
FEPB16JT-E3/45
FEPB16JT-E3/81
FEPF16JTHE3/45
(1)
FEPB16JTHE3/45
(1)
FEPB16JTHE3/81
(1)
UNIT WEIGHT (g)
1.85
1.97
1.35
1.35
1.97
1.35
1.35
PACKAGE CODE
45
45
45
81
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and TO-263AB package
Revision: 08-Jun-2018
Document Number: 88596
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
100
16
Instantaneous Reverse Leakage
Current (μA)
Resistive or Inductive Load
50 V to 400 V
500 V to 600 V
10
T
J
= 125 °C
Average Forward Current (A)
12
1
T
J
= 100 °C
8
T
J
= 25 °C
0.1
4
0
0
50
100
150
0.01
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
300
1000
T
C
= 100 °C
8.3 ms
Single
Half
Sine-Wave
50 V to 400 V
500 V to 600 V
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward
Surge
Current (A)
200
Junction Capacitance (pF)
250
150
100
100
50
0
1
10
100
10
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Instantaneous Forward Current (A)
T
J
= 125 °C
10
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 08-Jun-2018
Document Number: 88596
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
Vishay General Semiconductor
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
1 2 3
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
1 2 3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.028 (0.71)
0.020 (0.51)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 08-Jun-2018
Document Number: 88596
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000