Bipolar Transistor - Bipolar Junction Transistor (BJT) TRANS GP TAPE-7
Parameter Name | Attribute value |
Maker | NXP |
Product Category | Bipolar Transistor - Bipolar Junction Transistor (BJT) |
Installation style | SMD/SMT |
Package/box | SOT-346-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector-emitter maximum voltage VCEO | 50 V |
Collector-base voltage VCBO | 60 V |
Emitter-Base voltage VEBO | 5 V |
Collector-emitter saturation voltage | 600 mV |
Maximum DC collector current | 0.5 A |
Gain bandwidth product fT | 160 MHz |
Minimum operating temperature | - 65 C |
Maximum operating temperature | + 150 C |
DC current gain hFE maximum | 120 at 150 mA at 10 V |
high | 1.2 mm |
length | 3.1 mm |
width | 1.7 mm |
Collector continuous current | 0.5 A |
DC collector/Base Gain hfe Min | 120 |
Pd-power dissipation | 250 mW |
Factory packaging quantity | 3000 |