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2PD602AR T/R

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT) TRANS GP TAPE-7
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size54KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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2PD602AR T/R Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) TRANS GP TAPE-7

2PD602AR T/R Parametric

Parameter NameAttribute value
MakerNXP
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
Installation styleSMD/SMT
Package/boxSOT-346-3
Transistor polarityNPN
ConfigurationSingle
Collector-emitter maximum voltage VCEO50 V
Collector-base voltage VCBO60 V
Emitter-Base voltage VEBO5 V
Collector-emitter saturation voltage600 mV
Maximum DC collector current0.5 A
Gain bandwidth product fT160 MHz
Minimum operating temperature- 65 C
Maximum operating temperature+ 150 C
DC current gain hFE maximum120 at 150 mA at 10 V
high1.2 mm
length3.1 mm
width1.7 mm
Collector continuous current0.5 A
DC collector/Base Gain hfe Min120
Pd-power dissipation250 mW
Factory packaging quantity3000

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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