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S73WS256NEEBFWTB3

Description
Stacked Multi-Chip Product (MCP)
Categorystorage    storage   
File Size4MB,251 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
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S73WS256NEEBFWTB3 Overview

Stacked Multi-Chip Product (MCP)

S73WS256NEEBFWTB3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSPANSION
Parts packaging codeBGA
package instruction9 X 12 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-137
Contacts137
Reach Compliance Codeunknow
Other featuresMOBILE SDRAM IS ORGANIZED AS 4M X 16 X 4BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 codeR-PBGA-B137
JESD-609 codee1
length12 mm
memory density536870912 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals137
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width9 mm
S73WS256N Based MCPs
Stacked Multi-Chip Product (MCP)
512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only,
Simultaneous Read/Write, Burst Mode Flash Memory with
256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM
on Shared Data Bus
Data Sheet
ADVANCE
INFORMATION
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Publication Number
S73WS256N_00
Revision
A
Amendment
3
Issue Date
December 16, 2005
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